The Structures for Controlling Charge Carriers in Silicon Photo Cells

A. N. Dovbnya; V. P. Yefimov

doi:10.1615/TelecomRadEng.v67.i3.50

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Home > Journals > Telecommunications and Radio Engineering > Volume 67, 2008 Issue 3 > The Structures for Controlling Charge Carriers in Silicon Photo Cells

ISSN Print: 0040-2508
ISSN Online: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v67.i3.50
pages 241-258

The Structures for Controlling Charge Carriers in Silicon Photo Cells

A. N. Dovbnya
National Science Center "Kharkov Institute of Physics and Technology ", 1, Academicheskaya sir., Kharkov, 61108, Ukraine

V. P. Yefimov
National Science Center "Kharkov Institute of Physics and Technology ", 1, Academicheskaya sir., Kharkov, 61108, Ukraine

ABSTRACT

The structural model of lateral amorphous crystal unifications within a crystal silicon semiconductor is considered. The process of their formation includes various technological operations related to radiation amorphization of the silicon crystal structure with the fragments from the fission of uranium nuclei and hydrogenation of the structure, gamma-transmutation of silicon nuclei into aluminum, recovering of the crystal structure properties outside of the amorphous phase domain and the synthesis of the protecting illuminating coatings from the diamond-like carbon structures with sp²−sp³ electron hybridization.