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Telecommunications and Radio Engineering

ISSN Print: 0040-2508
ISSN Online: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v51.i2-3.130
pages 140-148

Influence of Depletion Transition Layers on Surface Polaritons in Semiconductor Films

N. N. Beletskii
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085
E. A. Gasan


A theory of TM type surface polaritons in semiconductor films possessing depletion transition layer which electron concentration changes according to the law of hyperbolic cosine is built. The influence of dissipative as well as non-dissipative damping caused by plasma resonance in transition layer on dispersion properties of normal and tangential modes of surface polaritons is determined. It is shown that in the absence of dissipative damping two dispersion branches both for normal and tangential modes of surface polaritons exist, parted by a frequency gap. The account of dissipative damping leads to vanishing of the gap and the presence of a single dispersion branch both for normal and tangential modes of surface polaritons, wherein the damping of tangential mode exceeds considerably the damping of normal mode.