Library Subscription: Guest
Home Begell Digital Library eBooks Journals References & Proceedings Research Collections
Telecommunications and Radio Engineering

ISSN Print: 0040-2508
ISSN Online: 1943-6009

You have access to:
Volume 73, 2014 Volume 72, 2013 Volume 71, 2012 Volume 70, 2011 Volume 69, 2010 Volume 68, 2009 Volume 67, 2008 Volume 66, 2007 Volume 65, 2006 Volume 64, 2005 Volume 63, 2005 Volume 62, 2004 Volume 61, 2004 Volume 60, 2003 Volume 59, 2003 Volume 58, 2002 Volume 57, 2002 Volume 56, 2001 Volume 55, 2001 Volume 54, 2000 Volume 53, 1999 Volume 52, 1998 Volume 51, 1997

Telecommunications and Radio Engineering


pages 140-148

Influence of Depletion Transition Layers on Surface Polaritons in Semiconductor Films

N. N. Beletskii
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085
E. A. Gasan

ABSTRACT

A theory of TM type surface polaritons in semiconductor films possessing depletion transition layer which electron concentration changes according to the law of hyperbolic cosine is built. The influence of dissipative as well as non-dissipative damping caused by plasma resonance in transition layer on dispersion properties of normal and tangential modes of surface polaritons is determined. It is shown that in the absence of dissipative damping two dispersion branches both for normal and tangential modes of surface polaritons exist, parted by a frequency gap. The account of dissipative damping leads to vanishing of the gap and the presence of a single dispersion branch both for normal and tangential modes of surface polaritons, wherein the damping of tangential mode exceeds considerably the damping of normal mode.