Millimeter- and Submillimeter-Wave Band Receiver on Hot Electrons

Yu. Ye. Kamenev; F. F. Sizov; V. N. Dobrovolsky

doi:10.1615/TelecomRadEng.v68.i6.80

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Home > Journals > Telecommunications and Radio Engineering > Volume 68, 2009 Issue 6 > Millimeter- and Submillimeter-Wave Band Receiver on Hot Electrons

ISSN Print: 0040-2508
ISSN Online: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v68.i6.80
pages 549-554

Millimeter- and Submillimeter-Wave Band Receiver on Hot Electrons

Yu. Ye. Kamenev
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085, Ukraine

F. F. Sizov
V. Ye. Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, Nauka Ave., 03028 Kyiv, Ukraine

V. N. Dobrovolsky
V. Ye. Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, Nauka Ave., 03028 Kyiv, Ukraine

ABSTRACT

A bolometric hot charge carriers (electron) receiver of the millimeter- and submillimeter-wave band with direct signal detection is suggested. The device can operate at the room or lessened temperatures at which the bipolar conductivity still exists in it. Operation of the receiver is based on variation of the conductivity under the influence of oscillation in bipolar plasma of a narrow-slot semiconductor. The experiments performed demonstrate the possibility to record the oscillation by means of using this receiver at frequencies of ν = 0.036, 0.039, 0.055, 0.075, 0.89 and 1.58 THz at 300 K as well as at decreasing of the temperature up to − 80° C.