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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

Published 4 issues per year

ISSN Print: 1093-3611

ISSN Online: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

Indexed in

LIBS ANALYSIS OF PHOTOVOLTAIC MATERIAL INCLUDING WAFER AND RAW MATERIAL

Volume 10, Issue 4, 2006, pp. 583-590
DOI: 10.1615/HighTempMatProc.v10.i4.90
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ABSTRACT

Laser Induced Breakdown Spectroscopy is a new analytical method permitting in less than 10.10−6 second to qualify by atomic emission spectroscopy the composition of every kind of material without any sampling. The high sensibility of the technique (10−7g/g) gives the possibility to qualify the purity of the material, its defects or any kind of pollutant from the crucible or impurity from the raw material. We have developed this technique for three kinds of silicon materials; firstly metallurgical grade silicon, the raw material, secondly this previous silicon after its purification by an RF plasma process, at last the photovoltaic grade silicon to evaluate the efficiency of the plasma process purification. First analysis of photovoltaic and metallurgical grade silicon (raw material) gives references of two degrees of silicon purity. After the plasma treatment we analyze the surface and the bulk of the treated sample to understand diffusion mechanisms of impurities in the liquid material during the plasma treatment.

CITED BY
  1. Shalav Avi, Photovoltaics literature survey (No. 54), Progress in Photovoltaics: Research and Applications, 15, 4, 2007. Crossref

  2. Rousseau S., Benmansour M., Morvan D., Amouroux J., Purification of MG silicon by thermal plasma process coupled to DC bias of the liquid bath, Solar Energy Materials and Solar Cells, 91, 20, 2007. Crossref

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