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INTRINSIC GETTERING IN SILICON SUBSTRATE OF MOS STRUCTURES UNDER COMBINED INFLUENCE OF RADIATION AND PULSED MAGNETIC FIELDS
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ABSTRACT
In the paper, we consider a technique of high-temperature gettering in silicon of MOS structure. An importance of irradiation of the crystals by α-particles with the energy of 5 MeV consists in the formation of the defect layer at the end of the particle path at a depth of 25 μm that exceeds the depth used for formation of device structures. The radiation defects act as precipitation centers of the oxide phases under PMF-induced decay of oversaturated oxygen solution. These centers are effective intrinsic heterodynes in silicon. As a result, one observes lowering of concentration of the heterodyne centers at the surface layer which results in increase of the generation lifetime of the minor charge carriers and decrease of the reverse current of p−n junctions.
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