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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

Published 4 issues per year

ISSN Print: 1093-3611

ISSN Online: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

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SIMULATION OF ANNEALING AND THE ELDRS IN p-MNOS RadFETs

Volume 23, Issue 4, 2019, pp. 313-318
DOI: 10.1615/HighTempMatProc.2019031964
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ABSTRACT

The manifestation of simultaneous annealing in p-MNOS (metal-nitride-oxide-semiconductor) samples with thick oxide and a pronounced effect of enhanced low-dose-rate sensitivity (ELDRS) are investigated. The simulation was based on experimental data.

REFERENCES
  1. Holmes-Siedle, A.G. and Adams, L., RadFET: A Review of the Use of Metal-Oxide-Silicon Devices as Integrating Dosimeters, Int. J. Radiat. Appl. Instrum., Part C, vol. 28, no. 2, pp. 235-244, 1986.

  2. Jaksic, A., Ristic, G., Pejovic, M., Mohammadzadeh, A., Sudre, C., and Lane, W., Gamma-Ray Irradiation and Post-Irradiation Responses of High Dose Range RadFETs, IEEE Trans. Nucl. Sci., vol. 49, no. 3, pp. 1356-1363, 2002.

  3. Schwank, J.R., Roeske, S.B., Buetler, D.E., Moreno, D.J., and Shaneyfelt, M.R., A Dose Rate Independent p-MNOS Dosimeter for Space Applications, IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2671-2678, 1996.

  4. Zebrev, G.I. and Drosdetsky, M.G., Temporal and Dose Kinetics of Tunnel Relaxation of Non-Equilibrium Near-Interfacial Charged Defects in Insulators, IEEE Trans. Nucl. Sci., vol. 63, no. 6, pp. 2895-2902, 2016.

  5. Zebrev, G.I., Modeling and Simulation of the Enhanced Low-Dose-Rate Sensitivity of Thick Isolating Layers in Advanced ICs, Russian Microelectronics, vol. 35, no. 3, pp. 177-184, 2006.

  6. Zimin, P.A., Anashin, V.S., Chubunov, P.A., Meschurov, O.V., Useinov, R.G., Uzhegov, V.M., and Zebrev, G.I., ELDRS in p-MOS- and p-MNOS-based RadFETs with Thick Gate Insulators: Experiment and Simulation, RADECS 2018, Proc. of RADECS 2018, Gothenburg, Sweden, 2018.

  7. Zimin, P.A., Mrozovskaya, E.V., Chubunov, P.A., Anashin, V.S., and Zebrev, G.I., Calibration and Electric Characterization of p-MNOS RadFETs at Different Dose Rates and Temperatures, Nuclear Inst. Methods Phys. Res., vol. 940, pp. 307-312, 2019.

CITED BY
  1. Chubunov Pavel, Lapshin Artem, Solodilov Maksim, Ryazancev Roman, Gamzatov N., Evdokimova Svetlana, Computer simulation of radiation effects on high-speed non-volatile memory, Modeling of systems and processes, 15, 3, 2022. Crossref

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