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ISSN Print: 1093-3611
ISSN Online: 1940-4360
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SIMULATION OF ANNEALING AND THE ELDRS IN p-MNOS RadFETs
ABSTRACT
The manifestation of simultaneous annealing in p-MNOS (metal-nitride-oxide-semiconductor) samples with thick oxide and a pronounced effect of enhanced low-dose-rate sensitivity (ELDRS) are investigated. The simulation was based on experimental data.
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Zimin, P.A., Mrozovskaya, E.V., Chubunov, P.A., Anashin, V.S., and Zebrev, G.I., Calibration and Electric Characterization of p-MNOS RadFETs at Different Dose Rates and Temperatures, Nuclear Inst. Methods Phys. Res., vol. 940, pp. 307-312, 2019.
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Chubunov Pavel, Lapshin Artem, Solodilov Maksim, Ryazancev Roman, Gamzatov N., Evdokimova Svetlana, Computer simulation of radiation effects on high-speed non-volatile memory, Modeling of systems and processes, 15, 3, 2022. Crossref