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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

Published 4 issues per year

ISSN Print: 1093-3611

ISSN Online: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

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EFFECT OF INTERELECTRODE SPACE ON PROPERTIES OF SIH4/H2 DEPOSITION DISCHARGES OPERATING AT DIFFERENT RADIO FREQUENCIES

Volume 15, Issue 2, 2011, pp. 123-128
DOI: 10.1615/HighTempMatProc.v15.i2.50
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ABSTRACT

The combined effect of excitation frequency and the variation of the interelectrode space on properties of highly diluted silane in hydrogen discharges used for the deposition of μc−Si:H, is presented. For constant operation voltage, the increase of the electrode gap leads to a continuous increase of the power consumed in the discharge at 30 MHz, while at 50 MHz changes on the interelectrode space has almost no effect on the total power dissipation. At both frequencies the increase of the interelectrode space leads to an optimum in radical production that as frequency increases is displaced to lower electrode gaps. Film growth rate appears an optimal that coincides to the maximum of radical production at both frequencies, revealing that μc−Si:H deposition rate strongly depends on radicals (SiH2, Si2H4) that undergo rather fast reactions in the gas phase.

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