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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Print: 1093-3611
ISSN Online: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2016017148
pages 1-11

PROCESSES OF DEPOSITION OF AMORPHOUS METAL/CARBON FILMS OF VARIOUS ELEMENTAL COMPOSITIONS

M. V. Astashynskaya
Research Laboratory, Department of Solid State Physics, Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus
Valiantsin V. Astashynski
Research Laboratory, Department of Solid State Physics, Belarusian State University, 4 Nezavisimost Ave, Minsk, 220030, Belarus
N. T. Kvasov
Research Laboratory, Department of Solid State Physics, Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus
Vladimir V. Uglov
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus; National Research Tomsk Polytechnic University, 2a Lenin Ave., Tomsk, 634028, Russia

ABSTRACT

The regularities of changing the elemental composition of metal/carbon Cu/a−C:H and Ni/a−C:H composite thin films formed by combining the technology of physical sputtering a metal target with plasma-enhanced chemical vapor deposition from two types of reactive gases Ar−CH2 and Ar−CH4 are considered. The material of the metal target used was of two types: nickel and copper. Two such metals possess different abilities to dissolve in the lattice of carbon. The Rutherford backscattering method allows showing the behavior of the increasing carbon concentration with the growth of the content of a reactive gas (C2H2, CH4) in Me/a−C:H thin films.


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