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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.19 SNIP: 0.341 CiteScore™: 0.43

ISSN Print: 1093-3611
ISSN Online: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v9.i2.90
pages 269-277

PASSIVATION OF POLYCRYSTALLINE SILICON BY HYDROGEN PLASMA : CHARACTERIZATION BY IMPEDANCE SPECTROSCOPY

S. Darwiche
Laboratoire de Genie des Procedes Plasmas et Traitement de Surface - Université Pierre et Mane Curie- ENSCP 11-13, rue Pierre et Marie Curie 75231 Paris Cedex 05 France
M. Nikravech
Laboratoire de Genie des Precedes Plasmas et Traitement de Surfaces, Universite P. et M. Curie, Ecole Nationale Superieure de Chimie de Paris, 11 rue Pierre et Marie Curie 75005 Paris, France
Daniel Morvan
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France
Jacques Amouroux
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France
D. Ballutaud
Laboratoire de Physique des Solides et de Cristallogenese, CNRS, 1 place Aristide Briand, F-92195 Meudon CEDEX, France

ABSTRACT

Hydrogenation of silicon materials has attracted a great advantage for its photovoltaic properties. In this paper, we investigated the effects of hydrogen plasma treatment on the structure and properties of silicon surface. The electrical conductivity is measured before and after plasma exposure by impedance spectroscopy on solid indicating a promising method. We observed a strong dependence between measurements and operational conditions (temperature, atmosphere, ...). SIMS, and deuterium effusion are used in order to confirm the impedance measurements. The surface roughness is also evaluated by AFM.


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