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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.19 SNIP: 0.341 CiteScore™: 0.43

ISSN Print: 1093-3611
ISSN Online: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v9.i2.110
pages 287-297

IN SITU LASER ASSISTED DIAGNOSTICS ON GROWTH RATE OF THICK PACVD ORGANOSILICON FILMS

P. Supiot
Laboratoire de Genie des Precedes d'Interaction Fluides Reactifs-Materiaux UPRES EA 2698, Universite des Sciences et Technologies de Lille, 59655 VILLENEUVE D'ASCQ Cedex -France
C. Vivien
Laboratoire de Genie des Precedes d'Interaction Fluides Reactifs-Materiaux UPRES EA 2698, Universite des Sciences et Technologies de Lille, 59655 VILLENEUVE D'ASCQ Cedex -France
M. Aimard
Laboratoire de Genie des Precedes d’Interaction Fluides Reactifs-Materiaux UPRES EA 2698, Universite des Sciences et Technologies de Lille, 59655 VILLENEUVE D’ASCQ Cedex -France
R. Sumera
Laboratoire de Genie des Precedes d'Interaction Fluides Reactifs-Materiaux UPRES EA 2698, Universite des Sciences et Technologies de Lille, 59655 VILLENEUVE D'ASCQ Cedex -France
B. Bocquet
Institut d'Electronique, Microelectronique et Nanoelectronique UMR 8520, Universite des Sciences et Technologies de Lille, 59655 VILLENEUVE D'ASCQ Cedex -France

ABSTRACT

The purpose of the present work is to determine the growth rate of an organosilicon film during the deposition process. The films are obtained from the chemical decomposition of the 1,1,3,3 TetraMethylDiSilOxane (TMDSO) monomer premixed with oxygen by reaction in the far remote afterglow of a nitrogen microwave discharge. The process control, i.e. the knowledge about the relation between film thickness and deposition duration can only be achieved through in situ diagnostics. In this aim, the optical intensity of a laser beam signal after reflection on the substrate is monitored during deposition. The relevance of the analysis method has been tested for thicknesses close to 17 micrometers. The reproducibility of the signal is discussed according to the film properties. A first determination of the surface roughness has been proposed after comparison with theoretical reflectance. The resulting temporal evolution of the signal is compared with the film's thickness determined by profiler measurements for different deposition durations. Linearity of the growth rate deduced from reflected signal with the effective one has been demonstrated.


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