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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Print: 1093-3611
ISSN Online: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v8.i2.130
pages 293-299

SPECTRAL RESPONSE OF LARGE AREA AMORPHOUS SILICON SOLAR CELLS

L. Raniero
Instituto Nacional de Metrologia, Normalização e Qualidade Industrial-Divisão de Metrologia de Materiais, Av. Nossa Senhora das Graças, 50 - Prédio 3 - Dimci/Dimat, 25250-020 Xerém - Duque de Caxias - RJ
N. Martins
Departamento de Materiais, Faculdade de Ciencias e Tecnologia, Universidade Nova de Lisboa and CEMOP, Campus da Caparica, 2829-516 Caparica, Portugal
P. Canhola
Departamento de Materiais, Faculdade de Ciencias e Tecnologia, Universidade Nova de Lisboa and CEMOP, Campus da Caparica, 2829-516 Caparica, Portugal
S. Pereira
Departamento de Materiais, Faculdade de Ciencias e Tecnologia, Universidade Nova de Lisboa and CEMOP, Campus da Caparica, 2829-516 Caparica, Portugal
I. Ferreira
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
E. Fortunato
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
R. Martins
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal

ABSTRACT

In this work we report the study of spectral response on large area amorphous silicon solar cells (30×40 cm2), deposited through plasma enhanced chemical vapour deposition technique (PECVD) at excitation frequencies of 27.12 MHz. To perform this work, the solar cells were split in units of area of 0.126 cm2, which allows determining the device homogeneity over all the entire solar cell. Emphasis of this work is put the role of thickness and optical band gap of p-doped layer on the collection efficiency, spectral response, current density-voltage curves under standard condition and spectroscopy impedance. The results show that high transparent p-doped layer can be deposited at 42mW/cm2, which allows increasing the collection efficiency in 45%, at the blue region. The spectroscopy impedance performed showed to be efficient in analyzing the device shunt resistance, interfaces role on the device performances and the behaviour of the device depletion region, for the range of frequencies analysed.


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