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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Print: 1093-3611
ISSN Online: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2015015576
pages 263-267

LIGHT-EMITTING N-RICH SILICON NITRIDE FILMS DEPOSITED BY PLASMA-ENHANCED AND LOW-PRESSURE CVD

Irina N. Parkhomenko
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus
F. F. Komarov
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus; Institute of Applied Physics Problem, 7 Kurchatov Str., Minsk, 220045, Belarus
L. A. Vlasukova
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus
O. V. Milchanin
A.N. Sevchenko Research Institute of Applied Physical Problems, 7 Kurchatov Str., Minsk, 220045, Belarus
Maksim Makhavikou
A. N. Sevchenko Institute of Applied Physical Problems of Belarusian State University
A. Mudryi
Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, Minsk, Belarus
V. Zhyvulka
Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, Minsk, Belarus
J. Zuk
Maria Curie-Sklodowska University, Lublin, Poland
P. Kopycinski
Maria Curie-Sklodowska University, Lublin, Poland
L. Toganbaeva
Al-Farabi Kazakh National University, Almaty, Kazakhstan

ABSTRACT

N-rich silicon nitride films were deposited on Si wafers by plasma-enhanced (PECVD) and low-pressure chemical vapor deposition (LPCVD) techniques and, subsequently, annealed at 600°C. In spite of the same thickness and similar stoichiometric composition, the PECVD and LPCVD silicon nitride films differ in their light-emitting properties. The photoluminescence (PL) maxima lie in the red region and in the blue region for PECVD and LPCVD SiN1.5 films, respectively. The PL is most intensive for films deposited by PECVD. The characteristic features of the photoluminescence spectra of two sets of N-rich films are explained taking into account the contribution from the band tail states and defects in the silicon nitride matrix.


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