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International Journal for Multiscale Computational Engineering

Published 6 issues per year

ISSN Print: 1543-1649

ISSN Online: 1940-4352

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 1.4 To calculate the five year Impact Factor, citations are counted in 2017 to the previous five years and divided by the source items published in the previous five years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) 5-Year IF: 1.3 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 2.2 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00034 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.46 SJR: 0.333 SNIP: 0.606 CiteScore™:: 3.1 H-Index: 31

Indexed in

Multiscale Simulation Models for Transient Radiation Effects with 3D Ionizing Tracks in Semiconductor Nanodevices

Volume 7, Issue 1, 2009, pp. 9-16
DOI: 10.1615/IntJMultCompEng.v7.i1.30
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ABSTRACT

Multiscale simulation models are presented to allow for accurate simulation of transient radiation effects with 3D ionizing tracks in semiconductor nanodevices. These models are implemented in the new CFDRC mixed-mode simulator, which combines multiscale 3D Technology Computer-Aided Design (TCAD) device models (drift-diffusion-based carrier transport and nuclear ion track impact) and advanced compact transistor models. Three-dimensional adaptive mesh generation has been developed and used for simulations of single-event radiation effects with nuclear reactions and secondary particles computed by Vanderbilt’s MRED tools with the use of the Geant4 library.

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CITED BY
  1. Arslanbekov Robert R, Kolobov Vladimir I, Implicit and coupled fluid plasma solver with adaptive Cartesian mesh and its applications to non-equilibrium gas discharges, Plasma Sources Science and Technology, 30, 4, 2021. Crossref

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