RT Journal Article
ID 46b3517d1d076042
A1 Maksymov, P. P.
A1 Lukin, K. A.
T1 SELF-EXCITED OSCILLATIONS IN ABRUPT *p - n* JUNCTIONS WITH A FIXED REVERSE BIAS
JF Telecommunications and Radio Engineering
JO TRE
YR 2010
FD 2010-10-06
VO 69
IS 11
SP 1005
OP 1017
K1 semiconductor
K1 self‐oscillation diffusive‐drifting model
K1 reverse-biased p‐n junction
K1 impact ionization
AB Numerical methods are used to solve the drift-diffusion model equations for reverse-based *p - n* junctions. A regime of self-excited oscillations is analyzed for an abrupt junction with a fixed reverse bias. As has been shown, the equations of the drift-diffusion model of the *p - n* junctions under analysis in fact make up a mathematical model of a self-oscillating system. The generation mechanism of self-excited excitations has been
investigated. The factors influencing the oscillation frequency, amplitude and spectrum have been established and frequency ranges determined for reverse-biased *p - n* junctions made of various materials.
PB Begell House
LK http://dl.begellhouse.com/journals/0632a9d54950b268,5266678806436799,46b3517d1d076042.html