RT Journal Article ID 46b3517d1d076042 A1 Maksymov, P. P. A1 Lukin, K. A. T1 SELF-EXCITED OSCILLATIONS IN ABRUPT p - n JUNCTIONS WITH A FIXED REVERSE BIAS JF Telecommunications and Radio Engineering JO TRE YR 2010 FD 2010-10-06 VO 69 IS 11 SP 1005 OP 1017 K1 semiconductor K1 self‐oscillation diffusive‐drifting model K1 reverse-biased p‐n junction K1 impact ionization AB Numerical methods are used to solve the drift-diffusion model equations for reverse-based p - n junctions. A regime of self-excited oscillations is analyzed for an abrupt junction with a fixed reverse bias. As has been shown, the equations of the drift-diffusion model of the p - n junctions under analysis in fact make up a mathematical model of a self-oscillating system. The generation mechanism of self-excited excitations has been investigated. The factors influencing the oscillation frequency, amplitude and spectrum have been established and frequency ranges determined for reverse-biased p - n junctions made of various materials. PB Begell House LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,5266678806436799,46b3517d1d076042.html