%0 Journal Article %A Arkusha, Yu. V. %A Prokhorov, E. D. %A Storozhenko, I. P. %D 2002 %I Begell House %N 6-7 %P 7 %R 10.1615/TelecomRadEng.v57.i6-7.150 %T In 0.4Ga 0.6As Gunn Diodes with a m-n : InP1-x Asx Cathode %U https://www.dl.begellhouse.com/journals/0632a9d54950b268,4492b37e4b204808,7ba7455d14c477a6.html %V 57 %X The operation of the In0.4Ga0.6As Gunn-effect diodes with a m-n: InP1-xAsx cathode has been investigated in terms of a two-temperature model at a crystal lattice temperature of 300K and an active region length of 0.5; 0.8; 1.0 μm. The optimal InP1-xAsx composition is determined for each diode length. For the diode having a 10 μm-active region an optimal height of the potential barrier on the metal-semiconductor contact is likewise specified. It is shown that the maximum generation frequency is ~250GHz. %8 2007-03-19