%0 Journal Article
%A Arkusha, Yu. V.
%A Prokhorov, E. D.
%A Storozhenko, I. P.
%D 2002
%I Begell House
%N 6-7
%P 7
%R 10.1615/TelecomRadEng.v57.i6-7.150
%T In 0.4Ga 0.6As Gunn Diodes with a m-n : InP1-x Asx Cathode
%U https://www.dl.begellhouse.com/journals/0632a9d54950b268,4492b37e4b204808,7ba7455d14c477a6.html
%V 57
%X The operation of the In0.4Ga0.6As Gunn-effect diodes with a m-n: InP1-xAsx cathode has been investigated in terms of a two-temperature model at a crystal lattice temperature of 300K and an active region length of 0.5; 0.8; 1.0 μm. The optimal InP1-xAsx composition is determined for each diode length. For the diode having a 10 μm-active region an optimal height of the potential barrier on the metal-semiconductor contact is likewise specified. It is shown that the maximum generation frequency is ~250GHz.
%8 2007-03-19