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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v65.i14.50
pages 1293-1306

Magnetoresistance of Magnetic Tunneling Junctions with Step-Like Potential Barriers

N. N. Beletskii
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085
S. A. Borysenko
A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine
Vladimir M. Yakovenko
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085

要約

The influence of the bias voltage on the magnetoresistance of a magnetic tunneling junction with a step-like potential barrier has been studied theoretically in the frame of a two-band model of free electrons in ferromagnetic electrodes. It is shown that the dependence of the magnetoresistance of the magnetic tunneling junction on the bias voltage can be different according to the type and the thickness of the isolators forming a step-like tunneling potential barrier. It has been found that the magnetoresistance of the magnetic tunneling junction can change its sign and oscillate with increasing bias voltage. It has been shown that the sign reversal of the magnetoresistance is related to the increase in the transmission coefficient of majority electrons through the magnetic tunneling junction as the mutual orientation of magnetization of ferromagnetic electrodes switches from parallel to antiparallel.


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