年間 12 号発行
ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009
Indexed in
InP1-x(z)Asx(z) Variband Gunn Diodes with Different Cathode Contacts
要約
Physical phenomena of the intervalley transfer in Gunn diodes on the basis of InP1-x(z)Asx(z) variband semiconductor compounds with n+-n and n+-n−-n cathode contacts at different values of the active-zone length and the variband-layer thickness have been studied. It has been proved that the InP1-x(z)Asx(z) diodes excel the diodes based on the InP1-xAsx spatially homogeneous composition semiconductors (at the x = 0…0.4) in the output power and the oscillation efficiency over the whole frequency range.
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Storozhenko Ihor, Kaydash Maryna, Yaroshenko Oleksandr, The Study of Harmonic-Mode Operation of Transfer Electron Devices on Based Graded-Gap Semiconductors, 2018 IEEE 17th International Conference on Mathematical Methods in Electromagnetic Theory (MMET), 2018. Crossref