ライブラリ登録: Guest
Begell Digital Portal Begellデジタルライブラリー 電子書籍 ジャーナル 参考文献と会報 リサーチ集
Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

巻:
巻 79, 2020 巻 78, 2019 巻 77, 2018 巻 76, 2017 巻 75, 2016 巻 74, 2015 巻 73, 2014 巻 72, 2013 巻 71, 2012 巻 70, 2011 巻 69, 2010 巻 68, 2009 巻 67, 2008 巻 66, 2007 巻 65, 2006 巻 64, 2005 巻 63, 2005 巻 62, 2004 巻 61, 2004 巻 60, 2003 巻 59, 2003 巻 58, 2002 巻 57, 2002 巻 56, 2001 巻 55, 2001 巻 54, 2000 巻 53, 1999 巻 52, 1998 巻 51, 1997

Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v66.i19.70
pages 1775-1790

InP1-x(z)Asx(z) Variband Gunn Diodes with Different Cathode Contacts

I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine

要約

Physical phenomena of the intervalley transfer in Gunn diodes on the basis of InP1-x(z)Asx(z) variband semiconductor compounds with n+-n and n+-n-n cathode contacts at different values of the active-zone length and the variband-layer thickness have been studied. It has been proved that the InP1-x(z)Asx(z) diodes excel the diodes based on the InP1-xAsx spatially homogeneous composition semiconductors (at the x = 0…0.4) in the output power and the oscillation efficiency over the whole frequency range.


Articles with similar content:

Modelling the Gunn Diodes Based on Variband Semiconductors
Telecommunications and Radio Engineering, Vol.59, 2003, issue 1&2
I. P. Storozhenko
In 0.4Ga 0.6As Gunn Diodes with a m-n : InP1-x Asx Cathode
Telecommunications and Radio Engineering, Vol.57, 2002, issue 6-7
Yu. V. Arkusha, E. D. Prokhorov, I. P. Storozhenko
Energy and Frequency Characteristics of the Gann Diodes Based On A3B5 Threefold Semiconductors with Linearly Changing Composition in the Active Zone
Telecommunications and Radio Engineering, Vol.61, 2004, issue 7-12
Yu. V. Arkusha, E. D. Prokhorov, I. P. Storozhenko
Operation of Gunn Diode Containing Two InP0.7As0.3−In0.4Ga0.6As Active Regions
Telecommunications and Radio Engineering, Vol.59, 2003, issue 1&2
Yu. V. Arkusha, E. D. Prokhorov, I. P. Storozhenko
STATIC DOMAIN IN A TRANSFERRED-ELECTRON DEVICE BASED ON GRADED-GAP AlGaAS
Telecommunications and Radio Engineering, Vol.75, 2016, issue 12
I. P. Storozhenko