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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v66.i19.60
pages 1769-1774

Electrical Properties of Surface-Barrier Diodes Based on the CdTe Crystals with Modified Surface

Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
V. V. Mel'nyk
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi, Ukraine
N. V. Skrypnyk
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi, Ukraine
V. V. Gorley
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine

要約

It was shown that the annealing of n−CdTe substrates in the water suspension of alkaline metals leads to the significant increase of potential barrier height and open-circuit voltage for the surface-barrier Au-CdTe diodes created on their base. The main electric current transport mechanism responsible for the positive-biased branch of current-voltage curve is carrier recombination in the space-charge region involving deep levels.


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