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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v66.i19.90
pages 1799-1804

Influence of Pulse Electromagnetic Fields on Integrated Memory Chips

L. N. Akhramovich
Tavriya National University, Yaltinskaya 4, Simpheropol, 95022, Ukraine
M. P. Gribskii
Tavriya National University, Yaltinskaya 4, Simpheropol, 95022, Ukraine
Ye. V. Grigor'ev
Tavriya National University, Yaltinskaya 4, Simpheropol, 95022, Ukraine
S. A. Zuev
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
V. V. Starostenko
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
G. I. Churyumov
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkov, 61166; Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine

要約

The experimental procedure for immediately effecting pulse electromagnetic fields on present day memory chips is described. The threshold values of the fields are found, at which there are operating errors in the chips, degradation phenomena in microstructure elements of crystals, and catastrophic failures of chips.


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