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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v70.i13.70
pages 1191-1202

SCATTERING ELECTRONS ON PLASMA OSCILLATIONS IN THE SEMICONDUCTOR-DIELECTRIC-SEMICONCUCTOR STRUCTURE

N. N. Beletskii
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085
S. I. Khankina
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085
Vladimir M. Yakovenko
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085
I. V. Yakovenko
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085

要約

The interaction of plasmons with the charged particle passing through the semiconductor-dielectric-semiconductor boundary has been studied taking into consideration the influence of the potential barrier. The probabilities of radiation and absorption of plasmons by the electron are found out. The conditions when processes of the plasmon emission prevail over of absorption are specified.


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