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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v70.i13.80
pages 1203-1215

INFLUENCE OF DIELECTRIC RELAXATION ON THE CONTACTLESS RESISTIVITY MEASUREMENT OF SEMIINSULATING CdZnTe CRYSTALS

S. L. Abashin
National Aerospace University (Kharkov Aviation Institute), 17, Chkalov St., Kharkiv, 61070, Ukraine
V. K. Komar
State Scientific Institution "Institute for Single Crystals" of National Academy of Sciences of Ukraine
D. P. Nalyvaiko
State Scientific Institution "Institute for Single Crystals" of National Academy of Sciences of Ukraine
S. V. Oleynick
National Aerospace University (Kharkov Aviation Institute), 17, Chkalov St., Kharkiv, 61070, Ukraine
V. M. Puzikov
State Scientific Institution "Institute for Single Crystals" of National Academy of Sciences of Ukraine
M. A. Rom
State Scientific Institution "Institute for Single Crystals" of National Academy of Sciences of Ukraine
S. V. Sulima
State Scientific Institution "Institute for Single Crystals" of National Academy of Sciences of Ukraine
O. N. Chugai
National Aerospace University (Kharkov Aviation Institute), 17, Chkalov St., Kharkiv, 61070, Ukraine

要約

The difference in of the resistivity ρ measured in both stationary and alternating electric fields has been established for Cd1−xZnxTe crystals (x = 0.12...0.16). It is shown that this discrepancy is related to the energy dissipation of the alternating electric field, caused by the dielectric relaxation. To evaluate the contribution of the dielectric relaxation in ρ, it is suggested to use a relaxation oscillator frequency distribution function, which can be found from the frequency dependence of the permittivity of crystal.


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