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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v71.i10.30
pages 905-922

ELECTRON-WAVE INTERACTION IN A SEMICONDUCTOR DIFFRACTION-GRATING STRUCTURE. PART 2: ACTIVE INTERACTIONS IN A SEMICONDUCTOR MICROSTRUCTURE

V. A. Abdulkadyrov
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085, Ukraine

要約

We have examined the active wave interactions in a semiconductor microstructure in terms of the self-consistent statement of the relevant problem. A wave increment in the structure with reflecting shields that possess s finite conductivity has been found. We have locked into the conditions enabling one to amplify e.m. waves in a distributed semiconductor microstructure on the basis of the Smith-Purcell effect. We have also studied the peculiar aspects of exciting an open resonator through the semiconductor microstructure in the uniform and Gaussian field distribution. An expression for the starting current has been specified.


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