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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v77.i1.50
pages 47-60

INFRARED RECEIVER ON ELECTRON TRANSITIONS INTO THE AUTOLOCALIZED STATE OVER THE HELIUM FILM ON THE STRUCTURED SUBSTRATE

V. A. Nikolaenko
B. Verkin Institute for Low Temperature Physics and Engineering, National Academy of Sciences of Ukraine, 47 Nauka Ave., Kharkiv, 61103, Ukraine
A. G. Pashchenko
Kharkiv National University of Radio Engineering and Electronics, 14 Nauka Ave, Kharkiv, 61166, Ukraine
Ya. Yu. Bessmolny
B. Verkin Institute for Low Temperature Physics and Engineering, National Academy of Sciences of Ukraine, 47 Nauka Ave., Kharkiv, 61103, Ukraine

要約

To construct an IR receiver, it is proposed to use a radiation-stimulated threshold transition from the state of the surface electron (SE) to the state of the surface anion (SA) over the helium film in the pores of the structured substrate. The transition depends on the thickness of the film, electric field, and density of the vapor phase. The electron mobility in the SE / SA transition corresponds to the theoretical analysis. The electrostatic model of a cylindrical pore in a longitudinal field demonstrates the preferential localization of electrons over the film inside the pore. The IR image is determined by the equipotential relief of the substrate, induced by the contrast of the electrons conductivity in the pores. The frequency range and sensitivity of the receiver are determined by the thermal sensitivity to the radiation of the pore walls and the operating temperature, reaching the quantum limit. The design and operation of the IR receiver are given.


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