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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v68.i7.90
pages 627-648

Stabilization of Nano-Dimensional Structures in the Single-Crystal Silicon Volume

A. N. Dovbnya
National Science Center "Kharkov Institute of Physics and Technology ", 1, Academicheskaya sir., Kharkov, 61108, Ukraine
V. P. Yefimov
National Science Center "Kharkov Institute of Physics and Technology ", 1, Academicheskaya sir., Kharkov, 61108, Ukraine
A. S. Abyzov
National Scientific Center "Kharkiv Institute of Physical Technologies", 1, Akademichna St., 61108 Kharkiv, Ukraine
A. V. Rybka
National Scientific Center "Kharkiv Institute of Physical Technologies", 1, Akademichna St., 61108 Kharkiv, Ukraine

要約

There are considered the possibilities for stabilization of microstructures during the process of hydrogenation of amorphous phases formed in the latent tracks within the single-crystal silicon by heavy nuclei fragments during their photo fission [1]. Interaction of the hydrogen with impurities and radiation defects initiates decomposition of its oversaturated solid-state solution. The atoms of hydrogen act as the catalyst while forming up of the clusters from small defects during the process of precipitation.