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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v74.i5.50
pages 423-430

GENERATION EFFICIENCY OF PLANAR DIODE WITH TUNNEL ANODE AND TUNNEL LATERAL BOUNDARY

E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
O. V. Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61022, Ukraine
O.A. Reutina
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkov, 61077, Ukraine

要約

Currently, the researching in millimeter and submillimeter waves is one of the topical tasks for radio physics. However, the active elements that can operate in these ranges are still limited. One option of such elements we propose is a diode with tunnel anode and tunnel lateral boundary. In the present work, current-voltage characteristics and the generating efficiency of GaAs-based diode have been investigated. Our goal was to determine the effect of tunnel anode and tunnel boundary parameters on the diode characteristics at low and high frequencies, as well as to estimate a diode frequency limit. Our study has shown that such diodes are able to generate in the range from tens to hundreds of GHz, as well as the possible presence of two voltage regions with negative differential conductivity. These findings have identified the main properties of the structures we proposed and can be used for further analysis of their physical processes and implementation.


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