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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v76.i1.40
pages 49-59

FLASH MEMORY ON THE BASIS OF QUANTUM POINTS

K. G. Slabyi
Kharkov National University of Radio Engineering and Electronics, 14, Nauka Ave, Kharkiv, 61166, Ukraine
A. G. Pashchenko
Kharkiv National University of Radio Engineering and Electronics, 14 Nauka Ave, Kharkiv, 61166, Ukraine

要約

The paper considers a memory cell based on the multulayer assimetrical quantum-dimensional GaAs/AlX1Ga1-X1As/AlX2Ga1-X2As structure. The recording cycle in the memory cell is performed by means of variation of the external voltage same as traditional memory. The peculiarities of the wave function localization of carriers in this structure were studied in writing and reading modes, depending an the magnitude of external electric field strength.


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