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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v67.i19.60
pages 1763-1768

Formation and Properties of n-CdO/p-CdTe Heterojunction

Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
N. V. Skrypnyk
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi, Ukraine

要約

Using photo-thermal oxidation of monocrystalline p-CdTe substrates, we have obtained the layers of n-CdO with a band gap of 2.6 eV at 300 K. This structure was used to create a heterojunction, which featured rectification coefficient surpassing 103 at 1 V and significant photosensitivity in the spectral range 1.5−2.9 eV. It was found that the main current flow mechanisms for the structure include recombination in the space charge region, tunneling and over-barrier transport.


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