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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v73.i5.70
pages 447-455

DEFINITION OF ELECTRONIC STATES DENSITIES FUNCTIONS IN AMORPHOUS SILICON

A. G. Pashchenko
Kharkiv National University of Radio Engineering and Electronics, 14 Nauka Ave, Kharkiv, 61166, Ukraine
O.Yu. Sologub
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkiv, 61166, Ukraine

要約

The analytical model for approximation of the electron states density and optical absorption of amorphous silicon is given. The results can be used in the mathematical models describing the operation of photovoltaic cells and other devices based on a − Si: H.

参考

  1. Moore, G., (1995) , Lithography and the Future of Moore Law.

  2. Street, R.A., (1991) , Cambridge Solid State Science Series: Hydrogenated amorphous silicon.

  3. Pavesi, L., (2003) , Will silicon be the photonic material of the third millennium?.

  4. Brendel, R., (2003) , Thin-film crystalline silicon solar cell.

  5. Searle, T., (1998) , Properties of silicon and its alloys.

  6. Poortmans, J. and Arkhipov, V., (2006) , Thin Film solar cell: fabrication, characterization and applications.

  7. Bisi, O., Ossicini, S., and Pavesi, L., (2000) , Porous silicon: a quantum sponge structure for silicon based optoelectronics.

  8. Jha, A.R., (2010) , Solar cell technology and applications.


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