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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v74.i16.50
pages 1457-1466

STUDY OF THE CHARGE TRANSPORT IN A LOW-TWO-DIMENSIONAL SEMICONDUCTOR STRUCTURE IN VIEW OF THE NON-MARKOV EFFECTS

S.V. Grischenko
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkiv, 61166, Ukraine
O.I. Sinel'nikova
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkiv, 61166, Ukraine
S.O. Yakushev
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkiv, 61166, Ukraine
V. I. Fesenko
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkiv, 61077; Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkiv, 61166, Ukraine
A. V. Shulika
Kharkiv National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkiv, 61166, Ukraine
I. A. Sukhoivanov
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkiv, 61166, Ukraine; FIMEE, Universidad de Guanajuato, Salamanca, Mexico

要約

The theoretical study of semiconductor p-i-n structure with a highly doped contact layers have been carried out. In the course of the work it was shown that at a low electron density in the active layer depletion the carrier scattering mechanisms were practically absent. Low electron relaxation time in the contact layers was the main cause of the evolution of states carriers in the active region, thereby increasing the current in the structure and appearance of the connection between the active area and contacts. The dynamic equations for the Fermi-Dirac distribution take into account the non-Markovian character of the electron density distribution in the structure, since they depend on the non-stationary wave vector drift.


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