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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v74.i16.60
pages 1467-1472

OPTICAL PROPERTIES OF MICROPOROUS n-GaAs

V.P. Makhnij
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., Chernivtsi, 58012, Ukraine
I.I. German
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., Chernivtsi, 58012, Ukraine
V.M. Sklarchuk
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., Chernivtsi, 58012, Ukraine

要約

The (111) oriented n-GaAs substrates were prepared by etching to grow microporous layers. It has been established that the obtained por-GaAs layers are more uniform on the substrate arsenic side B. These layers are similarly oriented pyramids with a base of 2-5 µm consisting of finer nanopyramides having lateral sizes of 1-100 nm. A wide photoluminescence band, observed on the side B in the energy range between 5 eV and 3.2 eV, is owing to the size quantization in the fine nanopyramides. The displacement of a high-energy optical absorption edge in the por-GaAs samples is explained by the joint action of the processes of light scattering on the nanopyramides and volume absorption in the fundamental transition region.


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