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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v74.i9.40
pages 787-795

LOCAL MW HEATING-UP KINETICS IN SEMICONDUCTORS AND DIELECTRICS

Yu. Ye. Gordienko
A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine; Kharkiv National University of Radio Engineering and Electronics, 14 Nauka Ave, Kharkiv, 61166, Ukraine
S. Yu. Larkin
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkiv, 61166, Ukraine
Mykola I. Slipchenko
Kharkiv National University of Radio Electronics, 14, Nauky Avenue, Kharkiv, 61166, Ukraine
Ye.L. Shcherbak
Kharkiv National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkiv, 61166, Ukraine

要約

A rigorous numerical simulation was used to ascertain the quantitative characteristic properties of highly local heating kinetics in semiconductuctors and dielectrics by means of near-field coaxial probes. The heating-up rate and locality are shown to be drastically increased, as the cross-section of the point in these types of probes decreases to the range of values in units of microns. This effect appears to be particularly more pronounced when the probe point is of spherical shape. The attained temperature holding locality is associated with the heat conduction of an objects material and tends to be impaired in comparison with the crossection of the probe point when the excitation pulse duration gets longer. As far as the micron sections of the point is concerned, the typical duration of the excitation pulse does not exceed ten fractions of a microsecond. The authors of the present paper suggest that the problem of holding a present temperature and minimizing the locality loss be partially resolved through the use of the sophisticated pulse power supply system in the MW micromodifier in question.


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