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Telecommunications and Radio Engineering

年間 12 号発行

ISSN 印刷: 0040-2508

ISSN オンライン: 1943-6009

SJR: 0.185 SNIP: 0.268 CiteScore™:: 1.5 H-Index: 22

Indexed in

Modelling the Gunn Diodes Based on Variband Semiconductors

巻 59, 発行 1&2, 2003, 11 pages
DOI: 10.1615/TelecomRadEng.v59.i12.100
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要約

A two-temperature model of intervalley electron transfer in the variband semiconductor is developed. This model was applied to examine the operation of the Gunn diodes based on the variband Inx(z)Ga1-x(z)As. In the active diode region the semiconductor composition x(z) is linearly coordinate-dependent. It is shown that operation of the diode with a variband active region is determined by the coordinate dependency of relaxation frequency of electron concentration in the Γ-valley of Inx(z)Ga1-x(z)As. If this frequency is a decreasing function of coordinate (in the Inx(z)Ga1-x(z)As this occurs when x(z) increases) the dipole domains propagate in the diode, while the opposite case is featured by the propagation of charged layers. The maximum output power flux ~6.5 kW/cm2 was obtained for the GaAs-In0.4Ga0.6As - diode at a frequency of 37 GHz with a 12% efficiency.

によって引用された
  1. Storozhenko I. P., Arkusha Yu. V., The generation by Gunn diodes based on the GaN, InN, AlN TED's in biharmonic regime, 2010 5th International Confernce on Ultrawideband and Ultrashort Impulse Signals, 2010. Crossref

  2. Storozhenko Ihor, Diode on Based Graded GaPAs-GaInAs as High Power Source of Millimeter Wave, 2021 IEEE 2nd KhPI Week on Advanced Technology (KhPIWeek), 2021. Crossref

  3. Storozhenko Ihor, Advanced Gunn Diode on Based Graded GaPAs - GaInAs as High Power Source of Millimeter Wave, 2021 IEEE Microwave Theory and Techniques in Wireless Communications (MTTW), 2021. Crossref

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