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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v57.i6-7.150
7 pages

In 0.4Ga 0.6As Gunn Diodes with a m-n : InP1-x Asx Cathode

Yu. V. Arkusha
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine
E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine

要約

The operation of the In0.4Ga0.6As Gunn-effect diodes with a m-n: InP1-xAsx cathode has been investigated in terms of a two-temperature model at a crystal lattice temperature of 300K and an active region length of 0.5; 0.8; 1.0 μm. The optimal InP1-xAsx composition is determined for each diode length. For the diode having a 10 μm-active region an optimal height of the potential barrier on the metal-semiconductor contact is likewise specified. It is shown that the maximum generation frequency is ~250GHz.


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