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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v57.i6-7.160
7 pages

High-Performance Continuous-Wave GalnSbAs/GaSb Type-II Lasers

D.A. Yarekha
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkov, 61166, Ukraine
A.N. Baranow
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkov, 61166, Ukraine
I. Rouyard
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkov, 61166, Ukraine
K. Alibert
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkov, 61166, Ukraine
M. M. Bykov
Kharkov National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkov, 61166, Ukraine

要約

The findings of the studies into narrow-stripe GalnSbAs/GaSb type-II QW lasers are presented. The measurements of laser performances have been made in a continuous-wave mode at room temperature. The optical output power reached 20mW/facet. The interval quantum efficiency of the lasers was found to be 89% and the power efficiency amounted to 20%. The laser emitted in the fundamental spatial mode and operated on a single frequency over a wide range of currents and temperatures. The side longitudinal mode suppression was as great as 30dB. The emission wavelength could be continuously current-tuned within 0.7 to 1.2nm. The single longitudinal mode behavior was attributable to the photorefractive effect owing to DX centers in the Te-doped emitter layer acting as a saturable absorber.


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