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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v71.i9.60
pages 847-859

HIGH-FREQUENCY ELECTRON CURRENT THROUGH A NON-STATIONARY TUNNEL JUNCTION

D. V. Abdulkadyrov
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkiv 61085, Ukraine
N. N. Beletskii
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085
S. A. Borysenko
A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine

要約

Tunneling electrons through a non-stationary tunnel junction are investigated within the framework of the approximation of one-quantum electron tunnel junctions. The effect of the thermal energy distribution of electrons in the emitter and collector of the tunnel junction is taken into account. The dependence of the high-frequency electron current on the frequency and the applied dc bias voltage is found. The influence of the barrier asymmetry on the active and reactive parts of the high-frequency electron current is studied.


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