年間 12 号発行
ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009
Indexed in
THE INFLUENCE OF BIAS CURRENT UPON THE FREQUENCY CHARACTERISTICS AND STABILITY OF METAL-SCHOTTKY GATE FIELD-EFFECT TRANSISTORS (MS-GFET)
要約
The influence of bias current upon the frequency characteristics and stability of MS-GFETs has been analyzed using the numerical simulation procedures. It is shown that, as the frequency of an effective voltage radio pulse increases, the bias current tends to grow and the conduction current decreases. As a result, the heating rate of the MS-GFET active region falls off, and there occurs the threshold voltage buildup, thereby leading to a breakdown onset.
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Wunsch, D.C. and Bell, R.R., Determination of threshold failure of semiconductor diodes and transistors due to pulse voltage.
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Zuyev, S.A., Starostenko, V.V., and Unzhakov, D.A., The influence of bias current upon the frequency and stability of MS-GFETs.
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Zuyev, S.A., Shadrin, A.A., and Starostenko, V.V., A model for calculating the GaAs micron-sized field-effect transistors.
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Zuyev, S.A., Taran, Ye.P., Shadrin, A.A., Starostenko, V.V., Churyumov, G.I., and Tereshchenko, V.Yu., Investigations into thermal conditions of the MS-GFET operation under the effect of the large-amplitude short voltage pulse.
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Obolensky, S.V. and Kitayev, M.A., Field-effect transistor with a 30-nm gate.
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Gribsky, M.P., Zuyev, S.A., Slipchenko, N.I., and Unzhakov, D.A., The influence of the gate width upon MS-GFET volt-ampere characteristics and electro-thermal stability.