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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v75.i16.40
pages 1457-1465

ON THE SPECTRUM OF ELECTROMAGNETIC WAVES IN THE ONE-DIMENSIONAL DEFECTIVE PHOTON CRYSTAL BORDERING ON CONDUCTING MEDIUM

N. N. Beletskii
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085
S. A. Borysenko
A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine

要約

Currently much attention is paid to the investigation of electromagnetic properties of defective photon crystals. This is stipulated by both the occurrence of plasma and defective waves in such crystals and the zone nature of the wave spectrum. One of the most interesting electromagnetic properties of the defective photon crystals is the resonance interaction of plasma and defective waves. It is found that the resonant interaction is observed most distinctly in the second forbidden band of the photon crystal. In this connection the study of electromagnetic-wave properties in various types of defective photon crystals is a topical problem. This paper is devoted to the study of the effect of resonant interaction of plasma and defective electromagnetic waves in the onedimensional defective photon crystals bordering on a conducting medium subject to the condition that the defective layer is a plasma-like one. It is shown that the best conditions for observing the effect of resonant interaction of plasma and defective electromagnetic waves take place in the case when the defective photon crystal borders on the semiconductor plasma and the magnitude of the dielectric permeability of the defective layer is a positive value and has an intermediate value between the values of the dielectric permeability of two layers of a unit cell of the photon crystal. The obtained results are of great practical importance for developing new devices of microelectronics and photonics.


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