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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v73.i13.70
pages 1209-1218

SUBMILLIMETER DIODE BASED ON GALLIUM ARSENIDE NANOSTRUCTURE

N. M. Goncharuk
Orion Research Institute, 8a, E. Potier St., Kyiv, 03057, Ukraine
N. F. Karushkin
State-owned Enterprise Scientific Research Institute "Orion", 8a Eu. Pottier St., Kyiv 03680, Ukraine
V. A. Orehovskiy
Orion Research Institute, 8a, E. Potier St., Kyiv, 03057, Ukraine
V. V. Malyshko
Orion Research Institute, 8a, E. Potier St., Kyiv, 03057, Ukraine

要約

Operating frequency of the submillimeter wave diode based on AlGaN/GaN single-barrier nanostructure with non-resonance electron tunneling is determined by inertia of their barrier tunneling. In the present work, we aimed to increase operating frequency, so we considered analogical diode on AlGaAs/GaAs nanostructure, in which the effective electron mass and, hence, the inertia of their tunneling are less than in AlGaN/GaN one. We studied dependencies of negative conductance and a reactance of the diode on its diameter, transit angle, frequency and tunneling time. As the result, we determined the optimal values of diode diameter and transit angle that correspond to a maximal negative conductance of the diode with different tunneling time. We proved that operating frequency of gallium arsenide diode is half as large again than that of gallium nitride diode with equal parameters of a barrier layer. Furthermore, at equal tunneling time, maximal negative conductance of gallium arsenide diode is less than those for gallium nitride.


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