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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v75.i12.50
pages 1087-1099

DYNAMICS OF DUAL-FREQUENCY AVALANCHE-GENERATOR DIODES IN MICROWAVE RANGE

K. A. Lukin
A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine
P. P. Maksymov
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine

要約

Development and implementation of microwave diode generators on the basis of active elements with the extended functional possibilities are a crucial task of semiconductor electronics. It is shown that avalanche-generator diodes (AGD) on the basis of abrupt p–n-junctions with constant voltage of the reversed bias are the generators of microwave power. The theoretical analysis of mathematical model of AGD is based on the decision of the complete system of equalizations of diffusive-drifting model describing physical processes in a diode considering the influence of mobile carriers charge on the electric field. A limiting cycle and invariant torus were calculated in the phase plane of AGD. It is shown that at high voltage of the reversed bias on abrupt p-n-junctions in AGD there is an internal feed-back between the electric field and avalanche current, resulting in current instability and generation of two-frequency oscillations. The results of theoretical analysis of AGD can be of practical interest to developing powerful dual-frequency sources of electromagnetic waves in microwave range.


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SELF-EXCITED OSCILLATIONS IN ABRUPT p - n JUNCTIONS WITH A FIXED REVERSE BIAS
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