ライブラリ登録: Guest
Begell Digital Portal Begellデジタルライブラリー 電子書籍 ジャーナル 参考文献と会報 リサーチ集
Journal of Porous Media
インパクトファクター: 1.49 5年インパクトファクター: 1.159 SJR: 0.43 SNIP: 0.671 CiteScore™: 1.58

ISSN 印刷: 1091-028X
ISSN オンライン: 1934-0508

巻:
巻 22, 2019 巻 21, 2018 巻 20, 2017 巻 19, 2016 巻 18, 2015 巻 17, 2014 巻 16, 2013 巻 15, 2012 巻 14, 2011 巻 13, 2010 巻 12, 2009 巻 11, 2008 巻 10, 2007 巻 9, 2006 巻 8, 2005 巻 7, 2004 巻 6, 2003 巻 5, 2002 巻 4, 2001 巻 3, 2000 巻 2, 1999 巻 1, 1998

Journal of Porous Media

DOI: 10.1615/JPorMedia.v13.i6.50
pages 557-563

AN EFFICIENT AND RELIABLE TWO-DIMENSIONAL PATTERNING OF POROUS SILICON

Hassan Hajghassem
Electrical Engineering Department, Shahid Beheshti University, Tehran, Iran
A. Erfanian
Electrical Engineering Department, K. N. Toosi University, Tehran, Iran
M. Mohtashamifar
Electronic Research Center, Tehran, Iran
M. Aliahmadi
Electronic Research Center, Tehran, Iran
S. Morteza Alehashemi
Electronic Research Center, Tehran, Iran
S. Maryam Banihashemian
Islamic Azad University, Qom Branch, Qom, Iran

要約

An efficient and reliable method for patterning a two-dimensional porous Si (PS) is presented in this work. The Cr/Au (50/200 nm) layer is used as a mask for electrochemical prosification of Si to form a two-dimensional pattern of porous Si. Quality of the formed 8 × 8 pads of porous Si is analyzed using statistical image analysis, an atomic force microscope, a scanning electron microscope, and also images from an optical microscope. It is shown that a combination of photoresist patterning and Cr/Au deposition can be used to generate arrays of silicon nanoporous in selected surface regions. Our results indicate that using the Cr/Au layer as a mask during prosification of Si results in sharper patterns with higher resolution in comparison to conventionally used photoresist masks such as Shipley and SU8 photoresists. The sharpness of the formed patterns is also investigated by calculating the correlation coefficient using image processing of the formed pattern with the ideal pattern. The correlation coefficient of the patterns made by the Cr/Au mask is 0.99 and the maximum deviation of the formed pattern from the original Cr/Au pattern is 3.44 μm, which shows an almost perfect correlation of the generated array with the ideal pattern.


Articles with similar content:

RECONSTRUCTION OF IMAGES WITH LARGE NON-UNIFORM INCREMENTS
Telecommunications and Radio Engineering, Vol.75, 2016, issue 8
S. I. Меlnyk, S. S. Melnyk
MULTIFREQUENCY MEASUREMENTS IN MILLIMETER WAVE RANGE AS A TOOL OF ARTIFICIAL STRUCTURES RESEARCH
Telecommunications and Radio Engineering, Vol.70, 2011, issue 15
A. D. Saltykov, V. V. Alekseev, D. Yu. Saltykov, O. O. Drobakhin
INFLUENCE OF SURFACE WETTABILITY AND NANOSTRUCTURE ON THE GENERATION OF INTERFACIAL NANOBUBBLES
International Heat Transfer Conference 16, Vol.19, 2018, issue
Koji Takahashi, Yasuyuki Takata, Hideaki Teshima, Takashi Nishiyama
Three-Dimensional Simulation of Phosphor Dispensing Process in Light Emitting Diode Packaging by Lattice Boltzmann Method
International Heat Transfer Conference 15, Vol.27, 2014, issue
Lan Li, Chao Yuan, Xiaobing Luo, Xingjian Yu, Huai Zheng
DETECTION OF MOVING TARGETS BY MULTI-LOOK SINGLE-ANTENNA SYNTHETIC APERTURE RADAR
Telecommunications and Radio Engineering, Vol.73, 2014, issue 2
B. A. Kochetov, O. O. Bezvesilniy