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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN 印刷: 1093-3611
ISSN オンライン: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2019031122
pages 283-290

INFLUENCE OF RAPID THERMAL TREATMENT OF INITIAL SILICON WAFERS ON THE ELECTROPHYSICAL PROPERTIES OF SILICON DIOXIDE OBTAINED BY PYROGENOUS OXIDATION

Vladimir A. Pilipenko
JSC "INTEGRAL" − Holding Management Company, 121A Kazinets Str., Minsk, 220108, Belarus
Vitaly A. Solodukha
JSC "INTEGRAL" − Holding Management Company, 121A Kazinets Str., Minsk, 220108, Belarus
Anatoly Zharin
Belarussian National Technical University, Minsk, Republic of Belarus
Oleg Gusev
Belarussian National Technical University, Minsk, Republic of Belarus
Roman Vorobey
Belarussian National Technical University, Minsk, Republic of Belarus
Kanstantsin Pantsialeyeu
Belarussian National Technical University, Minsk, Republic of Belarus
Andrei Tyavlovsky
Belarussian National Technical University, Minsk, Republic of Belarus
Konstantin Tyavlovsky
Belarussian National Technical University, Minsk, Republic of Belarus
Vitalii A. Bondariev
Department of Electrical Devices and High Voltage Technology, Lublin University of Technology, 38D Nadbystrzycka Str., Lublin, 20–618, Poland

要約

For investigation of the influence exerted by rapid thermal treatment of initial silicon wafers on the electrophysical properties of silicon dioxide obtained by means of the pyrogenous oxidation the analysis methods of volt-farad characteristics and the scanning probe electrometry were used. The obtained results demonstrate reduction of both stress of the flat zones and the charge density on the silicon-silicon dioxide boundary on the wafers, which were subjected to rapid thermal treatment. The alterations of the surface potential on the wafer area registered by means of the method of scanning probe electrometry correspond to the diminishing operation of the electrons, leaving the surface and serve as justification of the assertion that the properties of the silicon-silicon dioxide boundary improve after rapid thermal treatment of initial silicon wafers owing to the substantial enhancement of the homogeneity of microstructure of the surface layer of silicon dioxide.

参考

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