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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN 印刷: 1093-3611
ISSN オンライン: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v11.i3.130
pages 467-475

INFLUENCE OF NEGATIVE SUBSTRATE BIAS ON PLASMA PROPERTIES AND SILICON FILM DEPOSITION RATE

E. Katsia
Plasma Technology Lab, Dept. Chem. Engineering, University of Patras, P.O.Box 1407, 26500 Patra, Greece
P. Gkotsis
Plasma Technology Lab, Dept. Chem. Engineering, University of Patras, P.O.Box 1407, 26500 Patra, Greece
Dimitrious E. Rapakoulias
Plasma Technology Lab, Dept. Chem. Engineering, University of Patras, P.O.Box 1407, 26500 Patra, Greece

要約

The role of substrate bias on the properties of the discharge and on silicon film deposition was investigated. In order to isolate the bias effect on the deposition procedure the experiments were carried out under conditions of constant power dissipation and pressure. The applied negative bias voltage induces changes on the electrical characteristics (voltage, current, impedance) of the discharge affecting the electron density and consequently radical production rate. Furthermore, the applied substrate bias causes a decrease on the deposition rate, which could be attributed mainly to the modification of the product species density by the change of plasma -sustaining mechanism.