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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN 印刷: 1093-3611
ISSN オンライン: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2015015570
pages 255-261

ION-BEAM SYNTHESIS OF ZINC-BASED NANOPARTICLES IN Si AND SiO2

Maksim Makhavikou
A. N. Sevchenko Institute of Applied Physical Problems of Belarusian State University
F. F. Komarov
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus; Institute of Applied Physics Problem, 7 Kurchatov Str., Minsk, 220045, Belarus
L. A. Vlasukova
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus
O. V. Milchanin
A.N. Sevchenko Research Institute of Applied Physical Problems, 7 Kurchatov Str., Minsk, 220045, Belarus
Irina N. Parkhomenko
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus

要約

We have found that the use of "hot" conditions of implantation leads to the formation of the extended layer of SiO2 with a zinc-containing nanoclusters of size up to 5 nm. The created shape of clusters (rounded, faceted) makes it to suppose their crystalline structure. Following annealing at 700°C leads to redistribution of Zn atoms in implanted region and formation of the larger crystallites with sizes of 10−12 nm (for fluence of 5 × 1016 cm−2) and 12−18 nm (for fluence of 1017 cm−2). Significant diffusion of zinc atoms at "hot" conditions of implantation and subsequent annealing to the surface and deep into silicon dioxide samples was not found, in contrast to the samples of single-crystalline silicon.


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