ライブラリ登録: Guest
Begell Digital Portal Begellデジタルライブラリー 電子書籍 ジャーナル 参考文献と会報 リサーチ集
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN 印刷: 1093-3611
ISSN オンライン: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2015015619
pages 243-253

CHARACTERISTIC FEATURES OF THE PHOTOLUMINESCENCE OF ANODIC ALUMINA OXIDE IN THE α-PHASE

I. V. Gasenkova
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost Ave., Minsk, 220072, Belarus
N. I. Mukhurov
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost Ave., Minsk, 220072, Belarus
S. P. Zhvavy
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost Ave., Minsk, 220072, Belarus

要約

The results of investigation of the optical properties of porous anodic alumina oxide films modified by thermal annealing in air at a temperature of 1300°C are presented. It was found that intensive lines are observed in the red area of photoluminescence spectrum corresponding to the radiative transfer (2E → 4A2) of Mn4+ (678 nm) and Cr3+ (694 nm) ions that at high-temperature reconstruction of alumina oxide structure replace Al3+ ions in octahedral positions. Excitation of the luminescence of Mn4+ ions takes place in a wide strip with a maximum at 308 nm due to the absorption of radiation by oxygen vacancies located in the ion coordination sphere of these ions. It has been shown that photoluminescence in near UV and visible areas of spectrum is determined by oxygen vacancies (F and F2 type) in various charge conditions, the contribution of which is determined by the wavelength of exciting radiation.


Articles with similar content:

CHARACTERISATION OF AL2O3 PLASMA SPRAYING BY ATOMIC EMISSION SPECTROSCOPY AND NEAR INFRARED PYROMETRY
Progress in Plasma Processing of Materials, 2001, Vol.0, 2001, issue
J. M. Badie, Ph. Bertrand, I. Yu. Smurov, G. Colonges
CHARACTERISATION OF AL2O3 PLASMA SPRAYING BY ATOMIC EMISSION SPECTROSCOPY AND NEAR INFRARED PYROMETRY
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.15, 2011, issue 2
J. M. Badie, Ph. Bertrand, I. Yu. Smurov, G. Colonges
UV PHOTOELECTRIC DETECTOR WITH INCORPORATED INTERNAL GAIN
Telecommunications and Radio Engineering, Vol.71, 2012, issue 15
Victor P. Makhniy, V. V. Melnyk, S.N. Galkin, G. M. Onishchenko, V. D. Ryzhikov
STRUCTURAL STUDIES ON SEMICONDUCTING HYDROGENATED AMORPHOUS SILICON OXIDE FILMS
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.6, 2002, issue 1
S. M. Iftiquar
THE MODIFICATION OF PAPER INDUCED BY RADIO FREQUENCY AND MICROWAVE PLASMA TREATMENT
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.11, 2007, issue 4
S. V. Bordusov, Yu. S. Shynkevich, V. V. Azharonok, I. I. Filatova, A. P. Dostanko