RT Journal Article ID 02294e550b4d4849 A1 Katsia, E. A1 Gkotsis, P. A1 Rapakoulias, Dimitrious E. T1 INFLUENCE OF NEGATIVE SUBSTRATE BIAS ON PLASMA PROPERTIES AND SILICON FILM DEPOSITION RATE JF High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes JO HTM YR 2007 FD 2007-11-26 VO 11 IS 3 SP 467 OP 475 AB The role of substrate bias on the properties of the discharge and on silicon film deposition was investigated. In order to isolate the bias effect on the deposition procedure the experiments were carried out under conditions of constant power dissipation and pressure. The applied negative bias voltage induces changes on the electrical characteristics (voltage, current, impedance) of the discharge affecting the electron density and consequently radical production rate. Furthermore, the applied substrate bias causes a decrease on the deposition rate, which could be attributed mainly to the modification of the product species density by the change of plasma -sustaining mechanism. PB Begell House LK https://www.dl.begellhouse.com/journals/57d172397126f956,4a8f52230e1208e6,02294e550b4d4849.html