%0 Journal Article %A Storozhenko, I. P. %D 2007 %I Begell House %N 19 %P 1775-1790 %R 10.1615/TelecomRadEng.v66.i19.70 %T InP1-x(z)Asx(z) Variband Gunn Diodes with Different Cathode Contacts %U https://www.dl.begellhouse.com/journals/0632a9d54950b268,060b03713ef481af,237a04d719209884.html %V 66 %X Physical phenomena of the intervalley transfer in Gunn diodes on the basis of InP1-x(z)Asx(z) variband semiconductor compounds with n+-n and n+-n-n cathode contacts at different values of the active-zone length and the variband-layer thickness have been studied. It has been proved that the InP1-x(z)Asx(z) diodes excel the diodes based on the InP1-xAsx spatially homogeneous composition semiconductors (at the x = 0…0.4) in the output power and the oscillation efficiency over the whole frequency range. %8 2007-12-13