%0 Journal Article
%A Storozhenko, I. P.
%D 2007
%I Begell House
%N 19
%P 1775-1790
%R 10.1615/TelecomRadEng.v66.i19.70
%T InP1-x(z)Asx(z) Variband Gunn Diodes with Different Cathode Contacts
%U https://www.dl.begellhouse.com/journals/0632a9d54950b268,060b03713ef481af,237a04d719209884.html
%V 66
%X Physical phenomena of the intervalley transfer in Gunn diodes on the basis of InP1-x(z)Asx(z) variband semiconductor compounds with n+-n and n+-n−-n cathode contacts at different values of the active-zone length and the variband-layer thickness have been studied. It has been proved that the InP1-x(z)Asx(z) diodes excel the diodes based on the InP1-xAsx spatially homogeneous composition semiconductors (at the x = 0…0.4) in the output power and the oscillation efficiency over the whole frequency range.
%8 2007-12-13