RT Journal Article
ID 289acb962c15d8b4
A1 Slabyi, K. G.
A1 Pashchenko, A. G.
T1 FLASH MEMORY ON THE BASIS OF QUANTUM POINTS
JF Telecommunications and Radio Engineering
JO TRE
YR 2017
FD 2017-04-27
VO 76
IS 1
SP 49
OP 59
K1 floating gate transistor
K1 effective mass
K1 power diagram
K1 memory cell
AB The paper considers a memory cell based on the multulayer assimetrical quantum-dimensional
GaAs/AlX1Ga1-X1As/AlX2Ga1-X2As structure. The recording cycle in the memory cell is performed by means of variation of the external voltage same as traditional memory. The peculiarities of the wave function localization of carriers in this structure were studied in writing and reading modes, depending an the magnitude of external electric field strength.
PB Begell House
LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,2ad0fa6c43947779,289acb962c15d8b4.html