RT Journal Article ID 289acb962c15d8b4 A1 Slabyi, K. G. A1 Pashchenko, A. G. T1 FLASH MEMORY ON THE BASIS OF QUANTUM POINTS JF Telecommunications and Radio Engineering JO TRE YR 2017 FD 2017-04-27 VO 76 IS 1 SP 49 OP 59 K1 floating gate transistor K1 effective mass K1 power diagram K1 memory cell AB The paper considers a memory cell based on the multulayer assimetrical quantum-dimensional GaAs/AlX1Ga1-X1As/AlX2Ga1-X2As structure. The recording cycle in the memory cell is performed by means of variation of the external voltage same as traditional memory. The peculiarities of the wave function localization of carriers in this structure were studied in writing and reading modes, depending an the magnitude of external electric field strength. PB Begell House LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,2ad0fa6c43947779,289acb962c15d8b4.html