RT Journal Article ID 60e6be990204d986 A1 Grischenko, S.V. A1 Sinel'nikova, O.I. A1 Yakushev, S.O. A1 Fesenko, V. I. A1 Shulika, A. V. A1 Sukhoivanov, I. A. T1 STUDY OF THE CHARGE TRANSPORT IN A LOW-TWO-DIMENSIONAL SEMICONDUCTOR STRUCTURE IN VIEW OF THE NON-MARKOV EFFECTS JF Telecommunications and Radio Engineering JO TRE YR 2015 FD 2016-01-21 VO 74 IS 16 SP 1457 OP 1466 K1 nanostructures K1 active region K1 contact K1 the non-Markov effect AB The theoretical study of semiconductor p-i-n structure with a highly doped contact layers have been carried out. In the course of the work it was shown that at a low electron density in the active layer depletion the carrier scattering mechanisms were practically absent. Low electron relaxation time in the contact layers was the main cause of the evolution of states carriers in the active region, thereby increasing the current in the structure and appearance of the connection between the active area and contacts. The dynamic equations for the Fermi-Dirac distribution take into account the non-Markovian character of the electron density distribution in the structure, since they depend on the non-stationary wave vector drift. PB Begell House LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,35e91ba649d85d3c,60e6be990204d986.html