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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v66.i19.70
pages 1775-1790

InP1-x(z)Asx(z) Variband Gunn Diodes with Different Cathode Contacts

I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine

RESUMO

Physical phenomena of the intervalley transfer in Gunn diodes on the basis of InP1-x(z)Asx(z) variband semiconductor compounds with n+-n and n+-n-n cathode contacts at different values of the active-zone length and the variband-layer thickness have been studied. It has been proved that the InP1-x(z)Asx(z) diodes excel the diodes based on the InP1-xAsx spatially homogeneous composition semiconductors (at the x = 0…0.4) in the output power and the oscillation efficiency over the whole frequency range.


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